TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E

Vishay Semiconductors

Rev. B1.6, 02–Nov–00

6 (17)

www.vishay.com

Document Number 82525

Optoelectronic Characteristics

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Receiver

Minimum Detection

Threshold Irradiance,

SIR Mode

TFDS6501E/ TFDT6501E

9.6 kbit/s to 115.2 kbit/s

l = 850 nm to 900 nm

20

35

SIR Mode

TFDU6101E, TFDS6401

9.6 kbit/s to 115.2 kbit/s

l = 850 nm to 900 nm

25

40

Minimum Detection

Threshold Irradiance,

MIR Mode

TFDS6501E/ TFDT6501E

1.152 Mbit/s

l = 850 nm to 900 nm

50

MIR Mode

TFDU6101E, TFDS6401

1.152 Mbit/s

l = 850 nm to 900 nm

65

Minimum Detection

Threshold Irradiance,

FIR Mode

TFDS6501E/ TFDT6501E

4.0 Mbit/s

l = 850 nm to 900 nm

65

100

FIR Mode

TFDU6101E, TFDS6401

4.0 Mbit/s

l = 850 nm to 900 nm

85

100

Maximum Detection

Threshold Irradiance

l = 850 nm to 900 nm

5

10

Logic LOW Receiver

Input Irradiance

4

Rise Time of Output

Signal––,,,,klll

10% to 90%, @2.2 k

Ω, 15 pF

10

40

ns

Fall Time of Output

Signal

90% to 10%, @2.2 k

Ω, 15 pF

10

40

ns

Rxd Pulse Width of

Input pulse length 20

µs, 9.6 kbit/s

1.2

10

20

µs

Rxd Pulse Width of

Output Signal, 50%

SIR Mode

Input pulse length 1.41

ms,

115.2 kbit/s

1.2

1/2 bit

length

µs

Rxd Pulse Width of

Output Signal, 50%

MIR Mode

Input pulse length 217 ns,

1.152 Mbit/s

110

260

ns

Rxd Pulse Width of

Output Signal 50%

Input pulse length 125 ns, 4.0 Mbit/s

100

160

ns

Output Signal, 50%

FIR Mode

Input pulse length 250 ns, 4.0 Mbit/s

200

290

ns

Stochastic Jitter,

Leading Edge,

FIR Mode

4.0 Mbit/s

±10

ns

Latency

120

300

µs