CJPF04N80 datasheet(2/3 Pages) ZPSEMI

Part #	CJPF04N80

Description	Plastic-Encapsulate MOSFETS

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Manufacturer	ZPSEMI [ZP Semiconductor]

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2 / 3 page

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

800

V

Zero gate voltage drain current

IDSS

VDS =800V, VGS =0V

10

µA

Gate-body leakage current (note2)

IGSS

VDS =0V, VGS =±30V

±

100

nA

On characteristics (note2)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =250µA

3

5

V

Static drain-source on-resistance

RDS(on)

VGS =10V, ID =2.0A

3.0

Ω

Dynamic characteristics (note 3)

Input capacitance

Ciss

880

Output capacitance

Coss

100

Reverse transfer capacitance

Crss

VDS =25V,VGS =0V,f =1MHz

12

pF

Switching characteristics (note 2,3)

Total gate charge

Qg

25

Gate-source charge

Qgs

4.2

Gate-drain charge

Qgd

VDS =640V,VGS =10V,ID =4.0A

9.1

nC

Turn-on delay time

td(on)

40

Turn-on rise time

tr

100

Turn-off delay time

td(off)

80

Turn-off fall time

tf

VDD=400V, VGS=10V,

RG=25Ω, ID =4.0A

80

ns

Sourceource-drain diode characteristics

Maximum diode forward continuous current

IS

4

A

Maximum diode forward pulse current

ISM

16

A

Diode forward voltage

VSD

IS=4A,VGS=0V

1.4

V

Notes :

1.

L=20mH, IL=4 A, VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25

℃.

2.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3.

These parameters have no way to verify.

2 of 3

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CJPF04N80

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