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NCS2003ASN2T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCS2003ASN2T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 17 page NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS: VS = +1.8 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range. Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS NCS2003A 0.5 3.0 mV NCx2003, NCx20032, NCx20034 0.5 4.0 mV 5.0 mV Offset Voltage Drift DVOS/DT 2.0 mV/°C NCS2003A (Note 8) 6.0 mV/°C Input Bias Current IIB 1 pA Input Offset Current IOS 1 pA Channel Separation XTLK DC, NCx20032, NCx20034 100 dB Input Resistance RIN 1 T W Input Capacitance CIN 1.2 pF Common Mode Rejection Ratio CMRR VIN = VSS to VDD – 0.6 V 70 80 dB VIN = VSS + 0.2 V to VDD – 0.6 V 65 OUTPUT CHARACTERISTICS Open Loop Voltage Gain AVOL RL = 10 kW 80 92 dB 75 RL = 2 kW 92 70 Output Current Capability (Note 8) ISC Sourcing 5 8 mA Sinking 10 14 Output Voltage High VOH RL = 10 kW 1.75 1.798 V RL = 2 kW 1.7 1.78 Output Voltage Low VOL RL = 10 kW NCx2003, A 7 50 mV NCx2003x 7 100 RL = 2 kW 20 100 NOISE PERFORMANCE Voltage Noise Density eN f = 1 kHz 20 nV/ √Hz Current Noise Density iN f = 1 kHz 0.1 pA √Hz DYNAMIC PERORMANCE Gain Bandwidth Product GBWP 5 MHz Slew Rate at Unity Gain SR Rising Edge, RL = 2 kW, AV = +1 6 V/ ms Falling Edge, RL = 2 kW, AV = +1 9 Phase Margin ym RL = 10 kW, CL = 5 pF 53 ° Gain Margin Am RL = 10 kW, CL = 5 pF NCx2003, A 12 dB NCx2003x 8 Settling Time tS VO = 1 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% 1.8 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by design and/or characterization. |
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