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AS7C31025-20TJI Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS7C31025-20TJI Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation |
6 / 9 page ® AS7C1025 AS7C31025 3/23/01; v.1.0 Alliance Semiconductor P. 6 of 9 Data retention characteristics (over the operating range)13 Data retention waveform AC test conditions Notes 1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. 2 This parameter is sampled, but not 100% tested. 3 For test conditions, see AC Test Conditions, Figures A, B, and C. 4tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage. 5 This parameter is guaranteed, but not 100% tested. 6WE is High for read cycle. 7CE and OE are Low for read cycle. 8 Address valid prior to or coincident with CE transition Low. 9 All read cycle timings are referenced from the last valid address to the first transitioning address. 10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle. 11 All write cycle timings are referenced from the last valid address to the first transitioning address. 12 NA. 13 2V data retention applies to commercial temperature operating range only. 14 C=30pF, except all high Z and low Z parameters, where C=5pF. Parameter Symbol Test conditions Min Max Unit VCC for data retention VDR VCC = 2.0V CE ≥ V CC – 0.2V VIN ≥ VCC – 0.2V or VIN ≤ 0.2V 2.0 – V Data retention current ICCDR –500 µA Chip enable to data retention time tCDR 0– ns Operation recovery time tR tRC –ns Input leakage current | I LI | –1 µA VCC CE tR tCDR Data retention mode VCC VCC VDR ≥ 2.0V VIH VIH VDR 255W – 5V output load: see Figure B or Figure C. – Input pulse level: GND to 3.0V. See Figure A. – Input rise and fall times: 2 ns. See Figure A. – Input and output timing reference levels: 1.5V. C(14) 320W DOUT GND +3.3V 168W Thevenin equivalent: DOUT +1.728V (5V and 3.3V) Figure C: 3.3V Output load 255W C(14) 480W DOUT GND +5V Figure B: 5V Output load 10% 90% 10% 90% GND +3.0V Figure A: Input pulse 2 ns |
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