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IJW120R100T1 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IJW120R100T1 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 20 page Silicon Carbide JFET IJW120R100T1 Electrical characteristics Final Datasheet 9 Rev. 2.0, <2013-09-11> Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance Ciss – 1550 – pF VGS= -19.5 V; VDS= 0 V; f= 1 MHz – 1200 – VGS= -19.5 V; VDS= 800 V; f= 1 MHz Output capacitance Coss – 1070 – VGS= -19.5 V; VDS= 0 V; f= 1 MHz – 80 – VGS= -19.5 V; VDS= 800 V; f= 1 MHz Effective output capacitance, energy related 1) Co(er) – 89 – VGS= -19.5 V; VDS= 0 V/ 800 V; TC=25 °C Effective output capacitance, time related 2) Co(tr) – 112 – VGS= -19.5 V; VDS= 0 V/ 800 V; TC=25 °C Turn- on delay time td(on) – 49 – ns VDS= 800 V; VGS= -19.5 V/ 0 V; ID= 20 A; TC= 25 °C; RG,tot= 2 Ω Turn- off delay time td(off) – 30 – Rise time tr – 26 – Fall time tf – 19 – 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 V to 800 V 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 800 V Table 7 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate charge, gate to source QGS – 16 – nC VDS= 800 V to 0 V; IDS= 18 A; VGS= -19.5 V to 0 V Gate charge, gate to drain QGD – 32 – Gate charge, total QG – 72 – Gate plateau voltage Vplateau – -8 – V Table 8 Reverse diode characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Diode forward voltage VSD – 7.2 – V ISD = 18 A; VGS= -19.5 V; TC = 25 °C – 7.5 – ISD = 18 A; VGS= -19.5 V; TC = 100 °C – 7.6 – ISD = 18 A; VGS= -19.5 V; TC = 150 °C Reverse recovery time trr – 15.6 – ns ISD = 18 A; VDS = 800 V; RG= 0 Ω; Tj = 25 °C Reverse recovery charge Qrr – 118 – nC Peak reverse recovery current Irrm – 11 – A Current slope forward dIF/ dt – 3 – A/ns Current slope reverse dIrr/ dt – 1.3 – |
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