1)

J-STD20 and JESD22

Final Datasheet

2

Rev. 2.0, <2013-09-11>

Description

Features



Ultra fast switching



Internal fast body diode



Low intrinsic capacitance



Low gate charge



175 °C maximum operating temperature

Benefits



Enabling higher system efficiency and/ or higher output power in same housing



Enabling higher frequency / increased power density solutions



System cost / space savings due to reduced cooling requirements



Higher system reliability due to enlarged junction temperatures rates



Reduced EMI

Applications



Solar Inverters



High voltage DC/ DC or AC/ DC conversion



Bidirectional Inverter



Compliant for applications according to climate class IEC 60721-3-4 (4K4H)

Table 1

Key Performance Parameters

Parameter

Value

Unit

1200

V

70

m

Ω

92

nC

114

A

38

µJ

Table 2

Pin Definition

Pin 1

Pin 2

Pin 3

Gate

Drain

Source

Type / ordering Code

Package

Marking

Related links

IJW120R070T1

1)

PG-TO247-3

120R070T1

www.infineon.com/CoolSiC

CoolSiC

™ is Infineon’s new family of active power switches based on

silicon carbide. Combining the excellent material properties of silicon

carbide with our normally-on JFET concept allows the next steps towards

higher performance paired with very high ruggedness. The extremely low

switching and conduction losses make applications even more efficient,

compact, lighter and cooler.

Gate

Pin 1

Drain

Pin 2

Source

Pin 3

IJW120R070T1

1200 V Silicon Carbide JFET

Gate

Drain

Source