BD245D datasheet(2/2 Pages) ISC

Part #	BD245D

Description	isc Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

2

isc Silicon NPN Power Transistors

BD245D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA ;IB= 0

120

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A ;IB= 0.3A

1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A ;IB= 2.5A

4.0

V

VBE(on)-1

Base-Emitter On Voltage

IC= 3A ; VCE= 4V

1.6

V

VBE(on)-2

Base-Emitter On Voltage

IC= 10A ; VCE= 4V

3.0

V

ICEO

Collector Cutoff Current

VCE= 120V; IB=0

0.7

mA

ICBO

Collector Cutoff Current

VCB= 160V; IE=0

0.4

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

mA

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

40

hFE-2

DC Current Gain

IC= 3A ; VCE= 4V

20

hFE-3

DC Current Gain

IC= 10A ; VCE= 4V

4

fT

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V;ftest= 1.0MHz

3.0

MHz

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