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SN65LVDS31 Datasheet(PDF) 2 Page - Texas Instruments |
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SN65LVDS31 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 15 page SN65LVDS31 Logic Diagram (Positive Logic) 4Z 4Y 3Z 3Y 2Z 2Y 1Z 1Y 13 14 11 10 5 6 3 2 4A 3A 2A 1A G G 15 9 7 1 12 4 Logic Symbol SN65LVDS31 4Z 4Y 3Z 3Y 2Z 2Y 1Z 1Y 4A 3A 2A 1A G G 13 14 11 10 5 6 3 2 15 9 7 1 12 4 ≥ 1 EN This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. SN65LVDS31-EP SLLSE91 – SEPTEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION(1) ORDERABLE PART TA PACKAGE(2) TOP-SIDE MARKING VID NUMBER NUMBER –55°C to 125°C SOIC-D SN65LVDS31MDREP LVDS31EP V62/07627-01XE (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. (2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. xxx 2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): SN65LVDS31-EP |
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