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THS4500-1 Datasheet(PDF) 8 Page - Texas Instruments |
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THS4500-1 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 38 page 1,000 10,000 100,000 1,000,000 10,000,000 100,000,000 80 90 100 110 120 130 140 150 Continuous TJ (°C) Wirebond Voiding Fail Mode Electromigration Failure Mode THS4500-EP SLOS832 – JUNE 2013 www.ti.com ELECTRICAL CHARACTERISTICS: VS = 5 V (continued) Applicable for –55ºC ≤ TJ ≤ +125ºC, RF = RG = 392 Ω, RL = 800 Ω, G = +1, and single-ended input, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS OUTPUT COMMON-MODE VOLTAGE CONTROL Small-signal bandwidth RL = 400 Ω 180 MHz Slew rate 2 VPP Step 80 V/ μs Minimum gain 0.92 V/V Maximum gain 1.17 V/V Common-mode offset voltage -5.6 35 mV Input bias current VOCM = 2.5 V 3 μA Input voltage range 1.3 3.7 V Input impedance 25 || 1 k Ω || pF Maximum default voltage VOCM left floating 2.75 V Minimum default voltage VOCM left floating 2.25 V POWER SUPPLY Specified operating voltage 15 V Maximum quiescent current 38 mA Minimum quiescent current 10 mA Power-supply rejection (+PSRR) 66 dB POWER -DOWN Enable voltage threshold Device enabled ON above 2.1 V 2.1 V Disable voltage threshold Device disabled OFF below 0.7 V 0.7 V Power-down quiescent current 1400 μA Input bias current 140 μA Input impedance 50 || 1 k Ω || pF Turn-on time delay 1000 ns Turn-off time delay 800 ns (1) See datasheet for absolute maximum and minimum recommended operating conditions. (2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life). (3) Enhanced plastic product disclaimer applies. (4) Electromigration calculation is based on output switching 50% duty cycle at max load of 120 mA. Figure 1. THS4500-EP Derating Chart 8 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: THS4500-EP |
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