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IDL10G65C5 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IDL10G65C5 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 11 page  5 th Generation thinQ!TM SiC Schottky Diode IDL10G65C5 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2013-12-05 Table 9 Typ. capacitance charge vs. current slope 1) Typ. reverse current vs. reverse voltage 0 2 4 6 8 10 12 14 16 100 400 700 1000 dI F/dt [A/µs] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 100 200 300 400 500 600 VR [V] -55 C 25 C 100 C 150 C QC=f(dIF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj; 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 0.01 0.1 1 10 1E-6 1E-3 1E0 tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0 50 100 150 200 250 300 350 400 0 1 10 100 1000 VR [V] Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz |
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