Electronic Components Datasheet Search |
|
IPN10EL-S Datasheet(PDF) 10 Page - Infineon Technologies AG |
|
IPN10EL-S Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 18 page IPN10EL-S Description and Electrical Characteristics Data Sheet 10 Rev 1.1, 2014-01-21 5.1.5 Electrical Characteristics Table 5 Electrical Characteristic MOSFET Drivers V S = VUVOFF to 40V, TJ = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. Control inputs Low level input voltage of IH V IH_LL – – 0.8 V tested at V S =18V P_5.1.5 High level input voltage of IH V IH_HL 3.5 – – V P_5.1.6 Input hysteresis of IH d VIH 100 400 – mV P_5.1.7 IH pull-up current I IHH -6.0 -3.0 -1.0 µA EN=5V, VS=18V, IH=1V P_5.1.8 Low level input voltage of IL V IL_LL – – 0.8 V tested at V S =18V P_5.1.9 High level input voltage of IL V IL_HL 3.5 – – V P_5.1.10 Input hysteresis of IL d VIL 100 400 – mV P_5.1.11 IL pull-up current I ILH -6.0 -3.0 -1.0 µA EN=5V, VS=18V, IL=1V, int deadtime P_5.1.12 IL pull-down resistor to GND R ILL 0.35 0.8 1.4 MΩ EN=5V, VS=18V, IL=4V, external deadtime P_5.1.13 MOSFET driver output Gate peak current high side I GHP –400 –mA C Load=16nF; V S=18V; 10-90% P_5.1.14 Gate peak current low side I GLP –400 –mA P_5.1.15 Gate Source voltage high side V GSH -14 – – V P_5.1.16 Gate Source voltage low side V GSL – – 14 V P_5.1.17 Rise time t rise –380 –ns P_5.1.18 Fall time t fall –380 –ns P_5.1.19 Gate Charge Q Gtot – – 288 nC P_5.1.20 Dead time & input propagation delay times measured at 10% (90%) of the rising (falling) edge Programmable internal dead time logic level MOSFETs1) t DT 0.14 1.4 0.21 2.1 0.28 2.8 µs RDT=18kΩ RDT=180kΩ; VS=18V P_5.1.21 Programmable internal dead time normal level MOSFETs1) t DT 0.14 1.4 0.21 2.1 0.28 2.8 µs RDT=1kΩ RDT=10kΩ; VS=18V P_5.1.22 Input propagation time (low on) t P(ILN) –100 250 ns V S=18V; tested with no load condition P_5.1.23 Input propagation time (low off) t P(ILF) – 100 250 ns P_5.1.24 Input propagation time (high on) t P(IHN) – 100 250 ns P_5.1.25 Input propagation time (high off) t P(IHF) – 100 250 ns P_5.1.26 Absolute input propagation time difference between above propagation times see figure 5 t P(diff) – 50 150 ns P_5.1.27 Enable and low quiescent current mode EN propagation time to output stages switched off t PENA_H-L – 2.0 3.0 µs – P_5.1.28 |
Similar Part No. - IPN10EL-S_14 |
|
Similar Description - IPN10EL-S_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |