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IPN10EL-S Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # IPN10EL-S
Description  PN Half Bridge Driver IC
Download  18 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPN10EL-S Datasheet(HTML) 10 Page - Infineon Technologies AG

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IPN10EL-S
Description and Electrical Characteristics
Data Sheet
10
Rev 1.1, 2014-01-21
5.1.5
Electrical Characteristics
Table 5
Electrical Characteristic MOSFET Drivers
V
S = VUVOFF to 40V, TJ = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
Control inputs
Low level input voltage of IH
V
IH_LL
0.8
V
tested at
V
S =18V
P_5.1.5
High level input voltage of IH
V
IH_HL
3.5
V
P_5.1.6
Input hysteresis of IH
d
VIH
100
400
mV
P_5.1.7
IH pull-up current
I
IHH
-6.0
-3.0
-1.0
µA
EN=5V, VS=18V,
IH=1V
P_5.1.8
Low level input voltage of IL
V
IL_LL
0.8
V
tested at
V
S =18V
P_5.1.9
High level input voltage of IL
V
IL_HL
3.5
V
P_5.1.10
Input hysteresis of IL
d
VIL
100
400
mV
P_5.1.11
IL pull-up current
I
ILH
-6.0
-3.0
-1.0
µA
EN=5V, VS=18V,
IL=1V, int deadtime
P_5.1.12
IL pull-down resistor to GND
R
ILL
0.35
0.8
1.4
MΩ
EN=5V, VS=18V,
IL=4V, external
deadtime
P_5.1.13
MOSFET driver output
Gate peak current high side
I
GHP
–400
–mA
C
Load=16nF;
V
S=18V;
10-90%
P_5.1.14
Gate peak current low side
I
GLP
–400
–mA
P_5.1.15
Gate Source voltage high side
V
GSH
-14
V
P_5.1.16
Gate Source voltage low side
V
GSL
14
V
P_5.1.17
Rise time
t
rise
–380
–ns
P_5.1.18
Fall time
t
fall
–380
–ns
P_5.1.19
Gate Charge
Q
Gtot
288
nC
P_5.1.20
Dead time & input propagation delay times measured at 10% (90%) of the rising (falling) edge
Programmable internal dead time
logic level MOSFETs1)
t
DT
0.14
1.4
0.21
2.1
0.28
2.8
µs
RDT=18kΩ
RDT=180kΩ; VS=18V
P_5.1.21
Programmable internal dead time
normal level MOSFETs1)
t
DT
0.14
1.4
0.21
2.1
0.28
2.8
µs
RDT=1kΩ
RDT=10kΩ; VS=18V
P_5.1.22
Input propagation time (low on)
t
P(ILN)
–100
250
ns
V
S=18V;
tested with no load
condition
P_5.1.23
Input propagation time (low off)
t
P(ILF)
100
250
ns
P_5.1.24
Input propagation time (high on)
t
P(IHN)
100
250
ns
P_5.1.25
Input propagation time (high off)
t
P(IHF)
100
250
ns
P_5.1.26
Absolute input propagation time
difference between above
propagation times see figure 5
t
P(diff)
50
150
ns
P_5.1.27
Enable and low quiescent current mode
EN propagation time to output stages
switched off
t
PENA_H-L
2.0
3.0
µs
P_5.1.28


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