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MTB011N10RQ8-0-T3-G Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTB011N10RQ8-0-T3-G Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 MTB01 N10RQ8 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 BVDSS 100V 10.7A ID @ TA=25°C, VGS=10V 8.6A ID @ TA=70°C, VGS=10V Features RDS(ON)@VGS=10V, ID=11.5A 7.5 mΩ(typ) • Single Drive Requirement RDS(ON)@VGS=4.5V, ID=9.5A 9.8 mΩ(typ) 1 • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package Symbol Outline MTB011N10RQ8 SOP-8 Ordering Information Device Package Shipping MTB011N10RQ8-0-T3-G SOP-8 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel G:Gate D:Drain S:Source Pin 1 D D D D G S S S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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