IPD80R280P7 datasheet(1/13 Pages) INFINEON

Part #	IPD80R280P7

Description	800V CoolMOS짧 P7 Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1

IPD80R280P7

Rev.2.0,2016-07-05

Final Data Sheet

tab

1

2

3

DPAK

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

MOSFET

800VCoolMOSªP7PowerTransistor

Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V

superjunctiontechnologiesandcombinesbest-in-classperformancewith

stateoftheartease-of-use,resultingfromInfineon’sover18years

pioneeringsuperjunctiontechnologyinnovation.

Features

•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss

•Best-in-classDPAKRDS(on)

•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V

•IntegratedZenerDiodeESDprotection

•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial

gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)

•Fullyoptimizedportfolio

Benefits

•Best-in-classperformance

•Enablinghigherpowerdensitydesigns,BOMsavingsandlower

assemblycosts

•Easytodriveandtoparallel

•BetterproductionyieldbyreducingESDrelatedfailures

•Lessproductionissuesandreducedfieldreturns

•Easytoselectrightpartsforfinetuningofdesigns

Applications

RecommendedforhardandsoftswitchingflybacktopologiesforLED

Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand

Industrialpower.AlsosuitableforPFCstageinConsumerapplications

andSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj=25°C

800

V

RDS(on),max

0.28

Ω

Qg,typ

36

nC

ID

17

A

Eoss @ 500V

4

µJ

VGS(th),typ

3

V

ESD class (HBM)

2

-

Type/OrderingCode

Package

Marking

RelatedLinks

IPD80R280P7

PG-TO 252

80R280P7

see Appendix A

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