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IPD80R4K5P7 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IPD80R4K5P7
Description  800V CoolMOS짧 P7 Power Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD80R4K5P7 Datasheet(HTML) 3 Page - Infineon Technologies AG

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3
800VCoolMOSªP7PowerTransistor
IPD80R4K5P7
Rev.2.0,2016-07-05
Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Continuous drain current
1)
ID
-
-
-
-
1.5
1
A
TC=25°C
TC=100°C
Pulsed drain current
2)
ID,pulse
-
-
2.6
A
TC=25°C
Avalanche energy, single pulse
EAS
-
-
1
mJ
ID=0.2A; VDD=50V
Avalanche energy, repetitive
EAR
-
-
0.02
mJ
ID=0.2A; VDD=50V
Avalanche current, repetitive
IAR
-
-
0.2
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0to400V
Gate source voltage
VGS
-20
-30
-
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
13
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
1
A
TC=25°C
Diode pulse current
2)
IS,pulse
-
-
2.6
A
TC=25°C
Reverse diode dv/dt
3)
dv/dt
-
-
1
V/ns
VDS=0to400V,ISD<=0.2A,Tj=25°C
Maximum diode commutation speed
3)
dif/dt
-
-
50
A/
µs VDS=0to400V,ISD<=0.2A,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Thermal resistance, junction - case
RthJC
-
-
9.4
°C/W -
Thermal resistance, junction - ambient
RthJA
-
-
62
°C/W Device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version
RthJA
-
35
45
°C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm
2 (one
layer 70
µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
soldering allowed
Tsold
-
-
260
°C
reflow MSL1
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2
µs


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