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IPD80R4K5P7 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD80R4K5P7 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page 3 800VCoolMOSªP7PowerTransistor IPD80R4K5P7 Rev.2.0,2016-07-05 Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID - - - - 1.5 1 A TC=25°C TC=100°C Pulsed drain current 2) ID,pulse - - 2.6 A TC=25°C Avalanche energy, single pulse EAS - - 1 mJ ID=0.2A; VDD=50V Avalanche energy, repetitive EAR - - 0.02 mJ ID=0.2A; VDD=50V Avalanche current, repetitive IAR - - 0.2 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 13 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 1 A TC=25°C Diode pulse current 2) IS,pulse - - 2.6 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.2A,Tj=25°C Maximum diode commutation speed 3) dif/dt - - 50 A/ µs VDS=0to400V,ISD<=0.2A,Tj=25°C 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 9.4 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer 70 µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1 1) Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2 µs |
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