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IKW40N60DTP Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IKW40N60DTP Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 16 page 9 IKW40N60DTP TRENCHSTOPTMP erformanceSeries Rev.2.1,2016-02-08 Figure 9. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=40A,testcircuitinFig.E) rG,GATERESISTOR[ Ω] 0 5 10 15 20 25 30 35 40 45 10 100 1000 td(off) tf td(on) tr Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=40A, rG=10,1 Ω,testcircuitinFig.E) Tj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 10 100 td(off) tf td(on) tr Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,64mA) Tj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 typ. min. max. Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=10,1 Ω,testcircuitinFig.E) IC,COLLECTORCURRENT[A] 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 Eoff Eon Ets |
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