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2N3186 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N3186 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistors 2N3186 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.3A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; VCE=-0.3V -2.0 V ICEO Collector Cutoff Current VCE= -80V; IB=0 -5.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 mA hFE DC Current Gain IC= -2A ; VCE= -3V 10 30 |
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