BSO615CG_12 datasheet(6/13 Pages) INFINEON

Part #	BSO615CG

Description	SIPMOS횘 Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 13 page

20

12-04-04

Page 6

Rev. 2.

1

BSO 615 C G

Safe operating area (N-Ch.)

ID = f ( VDS )

parameter :

D = 0 , TA = 25 °C

10

-1

10

0

10

1

10

2

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

BSO 615 C

R D

S

(on)

=

V D

S

/ I D

DC

10 ms

1 ms

100 µs

10 µs

tp = 4.7µs

Safe operating area (P-Ch.)

ID = f ( VDS )

parameter :

D = 0 , TA = 25 °C

-10

-1

-10

0

-10

1

-10

2

V

VDS

-2

-10

-1

-10

0

-10

1

-10

A

BSO 615 C

DC

10 ms

1 ms

100 µs

tp = 90.0µs

Transient thermal impedance (N-Ch.)

ZthJC = f(tp)

parameter :

D = tp/T

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

3

s

tp

-1

10

0

10

1

10

2

10

K/W

BSO 615 C

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

Transient thermal impedance (P-Ch.)

ZthJC = f(tp)

parameter :

D = tp/T

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

3

s

tp

-2

10

-1

10

0

10

1

10

2

10

K/W

BSO 615 C

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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BSO615CG Datasheet(PDF) 6 Page - Infineon Technologies AG

BSO615CG Datasheet(HTML) 6 Page - Infineon Technologies AG

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