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TQ4H-L2-2M-24V Datasheet(PDF) 1 Page - Nais(Matsushita Electric Works) |
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TQ4H-L2-2M-24V Datasheet(HTML) 1 Page - Nais(Matsushita Electric Works) |
1 / 7 page 133 TQ-RELAYS LOW PROFILE 2 FORM C RELAY 9 .354 26.7 1.051 5 .197 +0.4 –0.2 +.016 –.008 mm inch 9 .354 14 .551 5 .197 +0.4 –0.2 +.016 –.008 FEATURES • High sensitivity: 2 Form C: 140 mW power consumption (single side stable type) 4 Form C: 280 mW power consumption (single side stable type) • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic washing • Self-clinching terminal also available • M.B.B. contact types available SPECIFICATIONS Contact Characteristics Standard (B.B.M) type M.B.B.type Arrangement 2 Form C 4 Form C 2 Form D Initial contact resistance, max. (By voltage drop 6 V DC 1A) 50 m Ω Contact material Gold-clad silver Rating Nominal switching capacity (resistive load) 1 A 30 V DC 0.5 A 125 V AC 1 A 30 V DC Max. switching power (resistive load) 30 W, 62.5 V A 30 W Max. switching voltage 110 V DC, 125 V AC 110 V DC Max. switching current 1 A Min. switching capacity f1 10 µA 10 mV DC Nominal operating power Single side stable 140 mW (3 to 12 V DC) 200 mW (24 V DC) 300 mW (48 V DC) 280 mW (3 to 24 V DC) 400 mW (48 V DC) 200 mW 1 coil latching 100 mW (3 to 12 V DC) 150 mW (24 V DC) 200 mW — 2 coil latching 200 mW (3 to 12 V DC) 300 mW (24 V DC) 400 mW — Expected life (min. opera- tions) Mechanical (at 180 cpm) 108 107 Electrical (at 20 cpm) (1 A 30 V DC resistive) 1 A 30 V DC resistive 2 ×105 105 0.5 A 125 V AC resistive 105 — Standard (B.B.M) type M.B.B.type Initial insulation resistance*1 Min. 1,000 M Ω (at 500 V DC) Initial breakdown voltage Between open contacts 750 Vrms for 1 min. (Detection current: 10 mA) 300 Vrms for 1 min. (Detection current: 10 mA) Between contact and coil 1,000 Vrms for 1 min. (Detection current: 10 mA) Between contact sets 1,000 Vrms for 1 min. (Detection current: 10 mA) FCC surge voltage between open contacts 1,500 V Operate time [Set time]*3 (at 20 °C) Max. 3 ms (Approx. 2 ms) [Max. 3 ms (Approx. 2 ms)] Release time [Reset time]*4 (at 20 °C) Max. 3 ms (Approx. 1 ms) [Max. 3 ms (Approx. 2 ms)] M.B.B. time*8 — Min. 10 µs. Temperature rise*2 (at 20 °C) Max. 50 °C Shock resistance Functional*5 Min. 490 m/s2 {50G} Destructive*6 Min. 980 m/s2 {100G} Vibration resistance Functional*7 176.4 m/s2 {18G}, 10 to 55 Hz at double amplitude of 3 mm Destructive 294 m/s2 {30G}, 10 to 55 Hz at double amplitude of 5 mm Conditions for operation, trans- port and storage*9 (Not freezing and condensing at low temperature) Ambient temperature –40 °C to +70°C –40 °F to +158°F –40 °C to +50°C –40 °F to +122°F Humidity 5 to 85% R.H. Unit weight 2 Form C: Approx. 1.5 g .053 oz 4 Form C: Approx. 3 g .106 oz. — Note: f1This value can change due to the switching frequency, environmental conditions, and desired reliability level, therefore it is recommended to check this with the ac- tual load. Remarks * Specifications will vary with foreign standards certification ratings. *1 Measurement at same location as "Initial breakdown voltage" section. *2 By resistive method, nominal voltage applied to the coil; contact carrying current: 1 A. *3 Nominal voltage applied to the coil, excluding contact bounce time. *4 Nominal voltage applied to the coil, excluding contact bounce time without diode. *5 Half-wave pulse of sine wave: 11 ms; detection time: 10 µs. *6 Half-wave pulse of sine wave: 6 ms. *7 Detection time: 10 µs. *8 M.B.B. time: *9 Refer to 4. Conditions for operation, transport and storage mentioned in Cautions for use (Page 178). Measuring condition Min. 10 µs 500 Ω 5 V DC TESTING |
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