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LM394CN Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM394CN Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 10 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications (Note 4) Collector Current 20 mA Collector-Emitter Voltage VMAX Collector-Emitter Voltage 35V LM394C 20V Collector-Base Voltage 35V LM394C 20V Collector-Substrate Voltage 35V LM394C 20V Collector-Collector Voltage 35V LM394C 20V Base-Emitter Current g 10 mA Power Dissipation 500 mW Junction Temperature LM194 b 55 Cto a125 C LM394LM394BLM394C b 25 Cto a85 C Storage Temperature Range b 65 Cto a150 C Soldering Information Metal Can Package (10 sec) 260 C Dual-In-Line Package (10 sec) 260 C Small Outline Package Vapor Phase (60 sec) 215 C Infrared (15 sec) 220 C See AN-450 ‘‘Surface Mounting and their Effects on Prod- uct Reliability’’ for other methods of soldering surface mount devices Electrical Characteristics (TJ e 25 C) Parameter Conditions LM194 LM394 LM394B394C Units Min Typ Max Min Typ Max Min Typ Max Current Gain (hFE)VCB e 0V to VMAX (Note 1) IC e 1 mA 350 700 300 700 225 500 IC e 100 mA 350 550 250 550 200 400 IC e 10 mA 300 450 200 450 150 300 IC e 1 mA 200 300 150 300 100 200 Current Gain Match VCB e 0V to VMAX (hFE Match) IC e 10 mA to 1 mA 05 2 05 4 10 5 % e 100 DIB hFE(MIN) IC IC e 1 mA 10 10 20 % Emitter-Base Offset VCB e 0 25 100 25 150 50 200 m V Voltage IC e 1 mAto1mA Change in Emitter-Base (Note 1) Offset Voltage vs IC e 1 mAto1mA 10 25 10 50 10 100 m V Collector-Base Voltage VCB e 0V to VMAX (CMRR) Change in Emitter-Base VCB e 0V 525 5 50 550 m V Offset Voltage vs IC e 1 mA to 03 mA Collector Current Emitter-Base Offset IC e 10 mA to 1 mA (Note 2) 008 03 008 10 02 15 m V C Voltage Temperature IC1 e IC2 Drift VOS Trimmed to 0 at 25 C 003 01 003 03 003 05 m V C Logging Conformity IC e 3nAto300 mA 150 150 150 m V VCB e 0 (Note 3) Collector-Base Leakage VCB e VMAX 005 025 005 05 005 05 nA Collector-Collector VCC e VMAX 01 20 01 50 01 50 nA Leakage Input Voltage Noise IC e 100 mA VCB e 0V 18 18 18 nV 0Hz f e 100 Hz to 100 kHz Collector to Emitter IC e 1 mA IB e 10 mA 02 02 02 V Saturation Voltage IC e 1 mA IB e 100 mA 01 01 01 V Note 1 Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA 10 mA 100 mA and 1 mA Note 2 Offset voltage drift with VOS e 0atTA e 25 C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset This ratio must be held to within 0003% over the entire temperature range Measurements taken at a25 C and temperature extremes Note 3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation Note 4 Refer to RETS194X drawing of military LM194H version for specifications 2 |
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