TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT

TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4EP72CPN 4194304 BY 72-BIT

EXTENDED-DATA-OUT DYNAMIC RAM MODULES

SMMS682A – AUGUST 1997– REVISED MARCH 1998

10

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and ambient temperature

(unless otherwise noted) (continued)

TM4EP72CxN

PARAMETER

TEST CONDITIONS†

’4EP72CxN-50

’4EP72CxN-60

’4EP72CxN-70

UNIT

PARAMETER

TEST CONDITIONS†

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

VOH

High-level

output

IOH = – 2 mA

LVTTL

2.4

2.4

2.4

V

VOH

output

voltage

IOH = – 100 µA

LVCMOS

VDD – 0.2

VDD – 0.2

VDD– 0.2

V

VOL

Low-level

output

IOL = 2 mA

LVTTL

0.4

0.4

0.4

V

VOL

output

voltage

IOL = 100 µA

LVCMOS

0.2

0.2

0.2

V

II

Input current

(leakage)

VDD = 3.6 V,

VI = 0 V to 3.9 V,

All others = 0 V to VDD

± 20

± 20

± 20

µA

IO

Output

current

(leakage)

VDD = 3.6 V,

VO = 0 V to VDD,

CASx high

± 20

± 20

± 20

µA

ICC1‡§

Average

read- or

write-cycle

current

VDD = 3.6 V,

Minimum cycle

1 620

1 260

1 080

mA

ICC2

Average

standby

VIH = 2 V (LVTTL),

After one memory cycle,

RASx and CASx high

36

36

36

mA

ICC2

standby

current

VIH = VDD – 0.2 V (LVCMOS),

After one memory cycle,

RASx and CASx high

18

18

18

mA

ICC3‡§

Average

refresh

current

(RASx-only

refresh

or CBR)

VDD = 3.6 V,

Minimum cycle,

RASx cycling,

CASx high (RASx-only refresh),

RASx low after CASx low (CBR)

1 620

1 260

1 080

mA

ICC4‡¶

Average

EDO current

VDD = 3.6 V,

tHPC = MIN,

RASx low,

CASx cycling

1 800

1 620

1 440

mA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RASx = VIL

¶ Measured with a maximum of one address change during each EDO cycle, tHPC