TP0202T datasheet(2/4 Pages) VISHAY

Part #	TP0202T

Description	P-Channel 20-V (D-S) MOSFET

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TP0202T

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70208

S-04279—Rev. G, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–20

–25

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –0.25 mA

–1.3

–2.1

–3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = –16 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

TJ = 55_C

–10

mA

On-State Drain Currentb

ID(on)

VDS = –10 V, VGS = –10 V

–0.5

–0.75

A

VGS = –4.5 V, ID = –0.05 A

1.7

3.5

W

Drain-Source On-Resistanceb

rDS(on)

VGS = –10 V, ID = –0.2 A

0.9

1.4

W

Forward Transconductanceb

gfs

VDS = –10 V, ID = –0.2 A

250

600

mS

Diode Forward Voltage

VSD

IS = –0.25 A, VGS = 0 V

–0.9

–1.5

V

Dynamic

Total Gate Charge

Qg

2700

Gate-Source Charge

Qgs

VDS –16 V, VGS =–10 V, ID ^ –200 mA

500

pC

Gate-Drain Charge

Qgd

600

Input Capacitance

Ciss

55

Output Capacitance

Coss

VDS = –15 V, VGS = 0 V, f = 1 MHz

50

pF

Reverse Transfer Capacitance

Crss

18

Switchingc

td(on)

8

12

Turn-On Time

tr

VDD = –15 V, RL = 75 W

^

20

30

td(off)

ID ^ –0.2 A, VGEN = –10 V

RG = 6 W

20

35

ns

Turn-Off Time

tf

30

40

Notes

a.

For DESIGN AID ONLY, not subject to production testing.

VPBP02

b.

Pulse test: PW

v300 ms duty cycle v2%.

c.

Switching time is essentially independent of operating temperature.

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