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SI4447ADY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4447ADY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 www.vishay.com 3 Vishay Siliconix Si4447ADY New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 5V VGS =4V VGS =3V V DS - Drain-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0.0 5.1 10.2 15.3 20.4 25.5 ID =5A VDS =20V VDS =30V VDS =10V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 01 2 3 45 TC = 125 °C TC = 25 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) Crss 0 320 640 960 1280 1600 0.0 2.4 4.8 7.2 9.6 12.0 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =5A VGS =4.5 V VGS =10V T J - Junction Temperature (°C) |
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