SI4447ADY datasheet(3/9 Pages) VISHAY

Part #	SI4447ADY

Description	P-Channel 40 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 67189

S10-2767-Rev. A, 29-Nov-10

www.vishay.com

3

Vishay Siliconix

Si4447ADY

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 5V

VGS =4V

VGS =3V

V

DS - Drain-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

0

6

12

18

24

30

VGS =10V

VGS =4.5 V

I

D - Drain Current (A)

0

2

4

6

8

10

0.0

5.1

10.2

15.3

20.4

25.5

ID =5A

VDS =20V

VDS =30V

VDS =10V

Q

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

01

2

3

45

TC = 125 °C

TC = 25 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

Crss

0

320

640

960

1280

1600

0.0

2.4

4.8

7.2

9.6

12.0

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =5A

VGS =4.5 V

VGS =10V

T

J - Junction Temperature (°C)

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