SiRA58DP

www.vishay.com

Vishay Siliconix

S16-0218-Rev. A, 08-Feb-16

1

Document Number: 76571

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

N-Channel 40 V (D-S) MOSFET

Ordering Information:

SiRA58DP-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

characteristics

• Material categorization:

for definitions of compliance please

APPLICATIONS

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters

Notes

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

PRODUCT SUMMARY

40

60

23 nC

60

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

+20, -16

A

Pulsed Drain Current (t = 100 μs)

150

Continuous Source-Drain Diode Current

25.1

Single Pulse Avalanche Current

L = 0.1 mH

30

Single Pulse Avalanche Energy

45

mJ

Maximum Power Dissipation

27.7

W

17.7

Operating Junction and Storage Temperature Range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

 10 s

20

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

3.4

4.5