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BSS214N Datasheet(PDF) 3 Page - ZP Semiconductor |
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BSS214N Datasheet(HTML) 3 Page - ZP Semiconductor |
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3 / 3 page  Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 107 143 pF Output capacitance C oss -46 62 Reverse transfer capacitance Crss -6 - Turn-on delay time t d(on) - 4.1 - ns Rise time t r - 7.8 - Turn-off delay time t d(off) - 6.8 - Fall time t f - 1.4 - Gate Charge Characteristics Gate to source charge Q gs - 0.24 - nC Gate to drain charge Q gd - 0.2 - Gate charge total Q g - 0.8 - Gate plateau voltage V plateau - 2.2 - V Reverse Diode Diode continous forward current I S - - 0.5 A Diode pulse current I S,pulse -- 6 Diode forward voltage V SD V GS=0 V, I F=1.5 A, T j=25 °C - 0.8 1.1 V Reverse recovery time t rr - 8.4 - ns Reverse recovery charge Q rr - 1.7 - nC V R=10 V, I F=1.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=1.5 A, R G=6 Ω V DD=10 V, I D=1.5 A, V GS=0 to 5 V BSS214N 3 of 3 sales@zpsemi.com www.zpsemi.com |
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Similar Description - BSS214N |
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