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DMN2300U Datasheet(PDF) 1 Page - ZP Semiconductor

Part # DMN2300U
Description  20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
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Manufacturer  ZPSEMI [ZP Semiconductor]
Direct Link  http://zpsemi.com/
Logo ZPSEMI - ZP Semiconductor

DMN2300U Datasheet(HTML) 1 Page - ZP Semiconductor

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DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS
RDS(on)
ID Max (Note 5)
20V
175m
Ω @ VGS = 4.5V
1.40A @ TA = 25°C
240m
Ω @ VGS = 2.5V
1.20A @ TA = 25°C
360m
Ω @ VGS = 1.8V
1.0A @ TA = 25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load switch
Features and Benefits
On resistance <200m
Ω
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin
Weight: 0.08 grams (approximate)
Ordering Information (Note 3)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2300U-7
N2U
7
8
3000
Notes:
1. No purposefully added lead
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT23
Top View
Top View
Equivalent Circuit
D
G
S
ESD PROTECTED TO 2kV
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
N2U
1 of 3
sales@zpsemi.com
www.zpsemi.com


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