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DMP1045U Datasheet(PDF) 2 Page - ZP Semiconductor |
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DMP1045U Datasheet(HTML) 2 Page - ZP Semiconductor |
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2 / 2 page  Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 4) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID 4.0 3.1 A Continuous Drain Current (Note 4) VGS = -2.5V Steady State TA = 25°C TA = 70°C ID 3.3 2.6 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID 5.2 4.2 A Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = 25°C TA = 70°C ID 4.3 3.4 A Maximum Continuous Body Diode Forward Current (Note 5) IS 2 A Pulsed Drain Current (10us pulse, duty cycle=1%) (Note 4) IDM 40 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) PD 0.8 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 168 °C/W Total Power Dissipation (Note 5) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 99 °C/W Thermal Resistance, Junction to Case (Note 5) RθJc 14.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -12 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = 25 C IDSS - - -1.0 μA VDS = -12V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.3 -0.55 -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 26 31 m Ω VGS = -4.5V, ID = -4.0A 31 45 VGS = -2.5V, ID = -3.5A 45 75 VGS = -1.8V, ID = -2.7A Forward Transfer Admittance |Yfs| - 12 - S VDS = -5V, ID = -4A Diode Forward Voltage VSD - -0.6 - V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 1357 - pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss - 504 - pF Reverse Transfer Capacitance Crss - 235 - pF Gate Resistnace Rg - 14.1 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Qg - 15.8 - nC VGS = -4.5V, VDS = -10V, ID = -4A Gate-Source Charge Qgs - 2.0 - nC Gate-Drain Charge Qgd - 3.9 - nC Turn-On Delay Time tD(on) - 15.7 - ns VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω Turn-On Rise Time tr - 23.3 - ns Turn-Off Delay Time tD(off) - 91.2 - ns Turn-Off Fall Time tf - 106.9 - ns Notes: 2. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2 sales@zpsemi.com www.zpsemi.com |
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Similar Description - DMP1045U |
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