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K6T4016U3C-B Datasheet(PDF) 6 Page - Samsung semiconductor |
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K6T4016U3C-B Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 9 page K6T4016V3C, K6T4016U3C Family CMOS SRAM Revision 2.01 October 2001 6 Address Data Out Previous Data Valid Data Valid TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL) TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z tRC CS Address UB, LB OE Data out tAA tRC tOH tOH tAA tCO tBA tOE tOLZ tBLZ tLZ tOHZ tBHZ tHZ NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. |
Similar Part No. - K6T4016U3C-B |
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Similar Description - K6T4016U3C-B |
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