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IRLML6344TRPBF Datasheet(PDF) 2 Page - ZP Semiconductor |
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IRLML6344TRPBF Datasheet(HTML) 2 Page - ZP Semiconductor |
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2 / 2 page  D S G Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 22 29 ––– 27 37 VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V IDSS ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.7 ––– Ω gfs Forward Transconductance 19 ––– ––– S Qg Total Gate Charge ––– 6.8 ––– Qgs Gate-to-Source Charge ––– 0.3 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 2.4 ––– td(on) Turn-On Delay Time ––– 4.2 ––– tr Rise Time ––– 5.6 ––– td(off) Turn-Off Delay Time ––– 22 ––– tf Fall Time ––– 9.1 ––– Ciss Input Capacitance ––– 650 ––– Coss Output Capacitance ––– 65 ––– Crss Reverse Transfer Capacitance ––– 46 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 10 15 ns Qrr Reverse Recovery Charge ––– 3.8 5.7 nC di/dt = 100A/μs d VGS = 12V VGS = -12V TJ = 25°C, IS = 5.0A, VGS = 0V d integral reverse p-n junction diode. VDS = 10V, ID = 5.0A ID = 5.0A ID = 1.0A TJ = 25°C, VR = 15V, IF=1.3A MOSFET symbol showing the VDS =15V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz RG = 6.8 Ω VGS = 4.5V d Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 5.0A d VDS = VGS, ID = 10μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C RDS(on) VGS = 2.5V, ID = 4.0A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Ω VDD =15V d nA nC ns pF A 1.3 25 ––– ––– ––– ––– IRLML6344TRPbF HEXFET® Power MOSFET 2 of 2 sales@zpsemi.com www.zpsemi.com |
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