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PMV30UN Datasheet(PDF) 3 Page - ZP Semiconductor |
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PMV30UN Datasheet(HTML) 3 Page - ZP Semiconductor |
3 / 3 page 4. Characteristics Table 3: Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V Tj =25 °C 20 --V Tj = −55 °C 18 --V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 0.45 0.7 - V Tj = 150 °C 0.25 0.4 - V IDSS drain-source leakage current VDS =20V; VGS =0V Tj =25 °C --1 µA Tj = 150 °C - - 100 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID =2A; Figure 7 and 8 Tj =25 °C - 30 36 m Ω Tj = 150 °C - 48 57.6 m Ω VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8 - 3643m Ω VGS = 1.8 V; ID =1A; Figure 7 and 8 - 4463m Ω Dynamic characteristics Qg(tot) total gate charge ID = 5 A; VDD =10V; VGS = 4.5 V; Figure 13 - 7.4 - nC Qgs gate-source charge - 1.2 - nC Qgd gate-drain (Miller) charge - 1.8 - nC Ciss input capacitance VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11 - 460 - pF Coss output capacitance - 100 - pF Crss reverse transfer capacitance - 70 - pF td(on) turn-on delay time VDD =10V; RL =10 Ω; VGS = 4.5 V; RG =6 Ω -7 -ns tr rise time -13 - ns td(off) turn-off delay time - 53 - ns tf fall time -13 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 1.7 A; VGS =0V; Figure 12 - 0.81 1.2 V PMV30UN µTrenchMOS™ ultra low level FET 3 of 3 sales@zpsemi.com www.zpsemi.com |
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