PMV30UN datasheet(3/3 Pages) ZPSEMI

Part #	PMV30UN

Description	N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS??technology.

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Manufacturer	ZPSEMI [ZP Semiconductor]

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4.

Characteristics

Table 3:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

20

--V

Tj = −55 °C

18

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

0.45

0.7

-

V

Tj = 150 °C

0.25

0.4

-

V

IDSS

drain-source leakage current

VDS =20V; VGS =0V

Tj =25 °C

--1

µA

Tj = 150 °C

-

100

µA

IGSS

gate-source leakage current

VGS = ±8 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID =2A; Figure 7 and 8

Tj =25 °C

-

30

36

m

Ω

Tj = 150 °C

-

48

57.6

m

Ω

VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8

-

3643m

Ω

VGS = 1.8 V; ID =1A; Figure 7 and 8

-

4463m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 5 A; VDD =10V; VGS = 4.5 V; Figure 13

-

7.4

-

nC

Qgs

gate-source charge

-

1.2

-

nC

Qgd

gate-drain (Miller) charge

-

1.8

-

nC

Ciss

input capacitance

VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11

-

460

-

pF

Coss

output capacitance

-

100

-

pF

Crss

reverse transfer capacitance

-

70

-

pF

td(on)

turn-on delay time

VDD =10V; RL =10 Ω; VGS = 4.5 V; RG =6 Ω

-7

-ns

tr

rise time

-13

-

ns

td(off)

turn-off delay time

-

53

-

ns

tf

fall time

-13

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 1.7 A; VGS =0V; Figure 12

-

0.81

1.2

V

PMV30UN

µTrenchMOS™ ultra low level FET

3 of 3

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