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K6T4016U3C-TB10 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6T4016U3C-TB10 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 9 page K6T4016V3C, K6T4016U3C Family CMOS SRAM Revision 2.01 October 2001 2 256Kx16 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6T4016V3C and K6T4016U3C families are fabricated by SAMSUNG ′s advanced CMOS process technology. The fami- lies support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology: TFT • Organization: 256K x16 • Power Supply Voltage K6T4016V3C Family: 3.0~3.6V K6T4016U3C Family: 2.7~3.3V • Low Data Retention Voltage: 2V(Min) • Three State Outputs • Package Type: 44-TSOP2-400F/R PIN DESCRIPTION Name Function Name Function CS Chip Select Input Vcc Power OE Output Enable Input Vss Ground WE Write Enable Input LB Lower Byte (I/O1~8) A0~A17 Address Inputs UB Upper Byte (I/O9~16) I/O1~I/O16 Data Input/Output NC No Connection PRODUCT FAMILY 1. The parameter is measured with 30pF test load. Product Family Operating Temperature Vcc Range Speed(ns) Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) K6T4016V3C-B Commercial(0~70 °C) 3.0~3.6V 551)/701)/85/100 15 µA 45mA 44-TSOP2-400F/R K6T4016U3C-B 2.7~3.3V 701)/85/100 K6T4016V3C-F Industrial(-40~85 °C) 3.0~3.6V 20 µA K6T4016U3C-F 2.7~3.3V A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 44-TSOP2 Forward 44-TSOP2 Reverse 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A13 A12 A11 A12 A4 A3 A2 A1 A0 CS I/OI I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A13 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. FUNCTIONAL BLOCK DIAGRAM Clk gen. Row select A5 A6 A7 A8 A9 A11 A10 A0 A1 A2 A3 A4 A13 A14 A15 WE OE UB CS I/O1~I/O8 A16 Data cont Data cont Data cont LB I/O9~I/O16 Vcc Vss A17 A12 Precharge circuit. Memory array 1024 rows 256 ×16 columns I/O Circuit Column select Control logic |
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