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K6T4016U3C-RB70 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6T4016U3C-RB70 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6T4016V3C, K6T4016U3C Family CMOS SRAM Revision 2.01 October 2001 1 Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.1 0.11 1.0 2.0 2.01 Remark Advance Preliminary Final Final Final History Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: 5mA at read/write to 4mA at read ICC1: 5mA to 6mA ICC2: 50mA to 45mA ISB: 0.5mA to 0.3mA ISB1: 10 µA to 15µA for commercial parts Errata correction Finalize Revise - Add K6T4016V3C-TB55 product Revise - Improved VOH(output high voltage) from 2.2V to 2.4V. Draft Date January 13, 1998 June 12, 1998 August 13, 1998 November 16, 1998 June 26, 2001 October 15, 2001 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. |
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