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K6T4016U3C-RB70 Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K6T4016U3C-RB70
Description  256Kx16 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4016U3C-RB70 Datasheet(HTML) 1 Page - Samsung semiconductor

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K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
1
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
0.0
0.1
0.11
1.0
2.0
2.01
Remark
Advance
Preliminary
Final
Final
Final
History
Initial draft
Revise
- Speed bin change
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
- DC Characteristics change
ICC: 5mA at read/write to 4mA at read
ICC1: 5mA to 6mA
ICC2: 50mA to 45mA
ISB: 0.5mA to 0.3mA
ISB1: 10
µA to 15µA for commercial parts
Errata correction
Finalize
Revise
- Add K6T4016V3C-TB55 product
Revise
- Improved VOH(output high voltage) from 2.2V to 2.4V.
Draft Date
January 13, 1998
June 12, 1998
August 13, 1998
November 16, 1998
June 26, 2001
October 15, 2001
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.


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