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NB3N3020 Datasheet(PDF) 5 Page - ON Semiconductor |
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NB3N3020 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page NB3N3020 http://onsemi.com 5 Table 3. ATTRIBUTES Characteristics Value ESD Protection Human Body Model 2 kV Moisture Sensitivity, Indefinite Time Out of Dry pack (Note 1) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 8287 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 4. MAXIMUM RATINGS (Note 2) Symbol Parameter Condition 1 Condition 2 Rating Unit VDD Positive Power Supply GND = 0 V 4.6 V VI Input Voltage (VIN) GND = 0 V GND ≤ VI ≤ VDD −0.5 V to VDD + 0.5 V V Iout LVPECL Output Current Continuous Surge 25 50 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm TSSOP–16 TSSOP–16 138 108 °C/W qJC Thermal Resistance (Junction−to−Case) (Note 3) TSSOP−16 33 to 36 °C/W Tsol Wave Solder 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 5. DC CHARACTERISTICS (VDD = 3.3 V ±10%, GND = 0 V, TA = −40°C to +85°C) Symbol Characteristic Min Typ Max Unit VDD Power Supply Voltage 2.97 3.3 3.63 V IDD Power Supply Current (Note 4) 60 75 mA IDDOE Power Supply Current when OE1, OE2 is Set Low 50 mA IDDOFF Power Supply Current when PLL is powered off by Sel0, Sel1, Sel2 5 mA VIH Input HIGH Voltage (X1/CLK, OE1, OE2) 2000 VDD + 300 mV VIL Input LOW Voltage (X1/CLK, OE1, OE2) GND − 300 800 mV VIH Input HIGH Voltage (Sel0, Sel1, Sel2) 0.72 VDD VDD + 300 mV VIL Input LOW Voltage (Sel0, Sel1, Sel2) GND − 300 800 mV VIM Input Mid Voltage (Sel0, Sel1, Sel2) (When left open, defaults to VDD/2 VDD/2 mV VOH Output HIGH Voltage for CLK2, CLK2 (See Figure 3) VDD – 1.145 VDD – 0.895 V VOL Output LOW Voltage for CLK2, CLK2 (See Figure 3) VDD – 2.090 VDD – 1.600 V VOH Output HIGH Voltage for CLK1 [IOH = −12 mA] 2.4 V VOL Output LOW Voltage for CLK1 [IOL = 12 mA] 0.4 V NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measurement taken at FCLKout = 125 MHz with LVPECL and LVCMOS/ LVTTL outputs not terminated. |
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