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NB4L52 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NB4L52
Description  2.5 V/3.3 V/5.0 V Differential Data/Clock D Flip-Flop
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NB4L52 Datasheet(HTML) 2 Page - ON Semiconductor

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NB4L52
http://onsemi.com
2
R
Figure 2. Pinout (Top View)
D
D
VTD
VTD
VCC
Q
CLK
Q
VTCLK
VEE
1
2
3
4
5
678
9
10
11
12
13
14
15
16
VTR
R
CLK
NB4L52
VTR
Exposed Pad (EP)
VTCLK
Table 2. PIN DESCRIPTION
Pin
Name
I/O
Description
1
VTD
Internal 50 W Termination Pin. (See Table 4)
2
D
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Noninverted Differential Input. (Note 1)
3
D
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Inverted Differential Input. (Note 1)
4
VTD
Internal 50 W Termination Pin. (See Table 4)
5
VTCLK
Internal 50 W Termination Pin. (See Table 4)
6
CLK
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Noninverted Differential Input. (Note 1)
7
CLK
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Inverted Differential Input. (Note 1)
8
VTCLK
Internal 50 W Termination Pin. (See Table 4)
9
VEE
Negative Supply Voltage
10
Q
ECL Output
Inverted Differential Output. Typically terminated with 50 W resistor to VCC − 2.0 V.
11
Q
ECL Output
Noninverted Differential Output. Typically terminated with 50 W resistor to VCC − 2.0 V.
12
VCC
Positive Supply Voltage
13
VTR
Internal 50 W Termination Pin. (See Table 4)
14
R
LVECL, LVCMOS,
LVTTL Input
Noninverted Differential Reset Input. (Note 1)
15
R
LVECL, LVCMOS,
LVTTL Input
Inverted Differential Reset Input. (Note 1)
16
VTR
Internal 50 W Termination Pin. (See Table 4)
EP
The Exposed Pad (EP) on the QFN−16 package bottom is thermally connected to the die
for improved heat transfer out of package. The pad is not electrically connected to the die,
but is recommended to be electrically and thermally connected to VEE on the PC board.
1. In the differential configuration when the input termination pin (VTD, VTD, VTR, VTR, VTCLK, VTCLK) are connected to a common
termination voltage or left open, and if no signal is applied on D/D,CLK/CLK,R/R input then the device will be susceptible to self−oscillation.


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