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CHA1010-99F Datasheet(PDF) 1 Page - United Monolithic Semiconductors |
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CHA1010-99F Datasheet(HTML) 1 Page - United Monolithic Semiconductors |
1 / 10 page CHA1010-99F Ref. : DSCHA10103333 - 29 Nov 13 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 7-11GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description IN OUT VD VG The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performance: 7-11GHz ■ 1.0dB Noise Figure ■ 32dB Linear Gain ■ +5.5dBm Pout at 1dB gain compression ■ DC bias: Vd=5Volt, Id=30mA ■ Chip size 2.57x1.79x0.1mm Main Electrical Characteristics Tamb= +25°C. Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 7 11 GHz Gain Linear Gain 32 dB NF Noise Figure 1.0 dB Pout Output Power @1dB compression 5.5 dBm -40°C, +25°C, +85°C |
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