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CHV1206-98F Datasheet(PDF) 3 Page - United Monolithic Semiconductors |
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CHV1206-98F Datasheet(HTML) 3 Page - United Monolithic Semiconductors |
3 / 10 page Low Phase Noise C band HBT VCO CHV1206-98F Ref. : DSCHV12066212 -July the 29th, 2016 3/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit VT Tuning voltage 15 V Vd Drain bias voltage 4 V Id Drain bias current 110 mA Tj Junction temperature 175 °C Ta Operating temperature range -55 to +125 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad N o Parameter Values Unit Vc VC Positive voltage supply 3 V VT VT Tuning Voltage 0 to 10 V |
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