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TGA2585-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TGA2585-SM
Description  2.7 to 3.7GHz, 18W GaN Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2585-SM Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Preliminary Datasheet: Rev-A 03-03-15
- 2 of 13 -
Disclaimer: Subject to change without notice
© 2015 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
40 V
Gate Voltage Range (VG)
−8 to 0 V
Drain Current (ID)
1530 mA
Gate Current (IG)
−7 to 11.5 mA
Power Dissipation (PDISS), 85°C
35 W
Input Power (PIN), CW, 50 Ω, 85°C
30 dBm
Input Power (PIN), CW, VSWR 10:1,
VD = 28 V, 85°C
23 dBm
Channel Temperature (TCH)
275°C
Mounting Temperature
(30 Seconds)
260°C
Storage Temperature
−55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
28 V
Drain Current (IDQ)
225 mA
Drain Current Under RF Drive (ID_DRIVE)
See plots p. 7
Gate Voltage (VG)
−2.5 V (Typ.)
Gate Current Under RF Drive (IG_DRIVE)
See plots p. 7
Electrical
specifications
are
measured
at
specified
test
conditions.
Specifications
are
not
guaranteed
over
all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 28 V, IDQ = 225 mA, VG = −2.5 V Typ, Pulsed VD: PW = 100 us, DC = 10 %
Parameter
Min
Typical
Max
Units
Operational Frequency Range
2.7
3.7
GHz
Small Signal Gain
32
dB
Input Return Loss
> 15
dB
Output Return Loss
> 10
dB
Output Power at Saturation (PIN = 18 dBm)
42.5
dBm
Power-Added Efficiency (PIN = 18 dBm)
> 50
%
Gain Temperature Coefficient
-0.05
dB/°C
Power Temperature Coefficient
-0.005
dBm/°C


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