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TGA2585-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TGA2585-SM Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 13 page TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Preliminary Datasheet: Rev-A 03-03-15 - 2 of 13 - Disclaimer: Subject to change without notice © 2015 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to 0 V Drain Current (ID) 1530 mA Gate Current (IG) −7 to 11.5 mA Power Dissipation (PDISS), 85°C 35 W Input Power (PIN), CW, 50 Ω, 85°C 30 dBm Input Power (PIN), CW, VSWR 10:1, VD = 28 V, 85°C 23 dBm Channel Temperature (TCH) 275°C Mounting Temperature (30 Seconds) 260°C Storage Temperature −55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) 28 V Drain Current (IDQ) 225 mA Drain Current Under RF Drive (ID_DRIVE) See plots p. 7 Gate Voltage (VG) −2.5 V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See plots p. 7 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 25 °C, VD = 28 V, IDQ = 225 mA, VG = −2.5 V Typ, Pulsed VD: PW = 100 us, DC = 10 % Parameter Min Typical Max Units Operational Frequency Range 2.7 3.7 GHz Small Signal Gain 32 dB Input Return Loss > 15 dB Output Return Loss > 10 dB Output Power at Saturation (PIN = 18 dBm) 42.5 dBm Power-Added Efficiency (PIN = 18 dBm) > 50 % Gain Temperature Coefficient -0.05 dB/°C Power Temperature Coefficient -0.005 dBm/°C |
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