PMV37EN datasheet(3/3 Pages) ZPSEMI

Part #	PMV37EN

Description	30 V, 3.1 A N-channel Trench MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 µA; VGS =0V; Tj = 25 °C

30

--V

VGSth

gate-source threshold

voltage

ID =250 µA; VDS =VGS; Tj =25°C

1

1.5

2.5

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

--1

µA

VDS =30V; VGS =0V; Tj = 150 °C

--10

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =3.1 A; Tj = 25 °C

-

28

36

m

Ω

VGS =10V; ID =3.1 A; Tj = 150 °C

-

4555m

Ω

VGS =4.5 V; ID = 2.7 A; Tj = 25 °C

-

37

47

m

Ω

gfs

forward

transconductance

VDS =5V; ID =3 A; Tj =25°C

-

10

-

S

Dynamic characteristics

QG(tot)

total gate charge

VDS =15V; ID =3A; VGS =10V;

Tj =25°C

-

6.5

10

nC

QGS

gate-source charge

-

1

-

nC

QGD

gate-drain charge

-

1

-

nC

Ciss

input capacitance

VDS =15V; f=1MHz; VGS =0V;

Tj =25°C

-

330

-

pF

Coss

output capacitance

-

76

-

pF

Crss

reverse transfer

capacitance

-36

-

pF

td(on)

turn-on delay time

VDS =15V; VGS =10V; RG(ext) =6 Ω;

Tj =25°C; ID =3A

-4

-ns

tr

rise time

-

14

-

ns

td(off)

turn-off delay time

-

55

-

ns

tf

fall time

-

23

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 0.6 A; VGS =0V; Tj = 25 °C

-

0.75

1.2

V

PMV37EN

30 V, 3.1 A N-channel Trench MOSFET

3 of 3

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