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BSL307SP Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSL307SP Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page 20 14-01-09 Page 3 Rev 2.0 BSL307SP Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs çVDSç≥2*çIDç*RDS(on)max ID=-4.4A 4.7 9.4 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 805 - pF Output capacitance Coss - 234 - Reverse transfer capacitance Crss - 195 - Turn-on delay time td(on) VDD=-15V, VGS=-10V, ID=-1A, RG=6Ω - 7.3 11 ns Rise time tr - 8.4 12.6 Turn-off delay time td(off) - 36.4 55 Fall time tf - 29 44 Gate Charge Characteristics Gate to source charge Qgs VDD=-24V, ID=-5.5A - -2 -2.5 nC Gate to drain charge Qgd - -8.2 -12.3 Gate charge total Qg VDD=-24V, ID=-5.5A, VGS=0 to -10V - -23.4 -29 Gate plateau voltage V(plateau) VDD=-24V, ID=-5.5A - -2.8 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -5.5 A Inverse diode direct current, pulsed ISM - - -22 Inverse diode forward voltage VSD VGS=0, |IF| = |ID| - -0.88 -1.3 V Reverse recovery time trr VR=-15V, |IF| = |lD|, diF/dt=100A/µs - 16.6 21 ns Reverse recovery charge Qrr - 6.2 7.8 nC |
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