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NE68039-T1 Datasheet(PDF) 2 Page - NEC |
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NE68039-T1 Datasheet(HTML) 2 Page - NEC |
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2 / 19 page  NE680 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.6 1.7 f = 2 GHz dB 1.7 2.4 1.8 3 1.9 f = 4 GHz dB 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 14 13.5 f = 2 GHz dB 12.5 10.2 9.6 f = 4 GHz dB 8 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 18.5 19 18.5 f = 2 GHz dB 16.2 12.7 11.8 f = 4 GHz dB 10.2 8.2 7.3 |S21E|2 Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 17 15.5 15 f = 2 GHz dB 10.5 12.5 7.5 9.8 9.2 f = 4 GHz dB 7.5 4.6 4.4 hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 80 160 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 0.3 0.7 PT Total Power Dissipation mW 400 150 100 RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1000 RTH (J- C) Thermal Resistance (Junction to Case) °C/W 120 200 200 PART NUMBER NE68000 NE68018 NE68019 EIAJ1 REGISTERED NUMBER 2SC5013 2SC5008 PACKAGE OUTLINE 00 (CHIP) 18 19 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX PART NUMBER NE68030 NE68033 NE68035 NE68039/39R EIAJ1 REGISTERED NUMBER 2SC4228 2SC3585 2SC3587 2SC4095 PACKAGE OUTLINE 30 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.5 1.6 f = 2 GHz dB 1.7 1.8 3.0 1.7 2.4 1.7 2.5 f = 4 GHz dB 2.9 2.1 2.6 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 12.5 11.0 f = 2 GHz dB 9.4 9.0 12.5 11 f = 4 GHz dB 5.3 4.2 8 6.5 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 17 17 18.5 18 f = 2 GHz dB 10.9 10.9 16.2 12.4 f = 4 GHz dB 6.8 6.7 10.2 8.7 |S21E|2 Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 13.5 13 17 14.5 f = 2 GHz dB 8.5 6.7 10.5 12.5 9.6 f = 2 GHz dB 3.6 3.7 7.5 4.9 hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 50 100 250 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0 1.0 Cre3 Feedback Capacitance at VCB = 3V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.8 0.2 0.7 0.25 0.8 PT Total Power Dissipation mW 150 200 290 200 RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 620 550 620 RTH (J- C) Thermal Resistance (Junction to Case) °C/W 200 200 200 200 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%. 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. |
Similar Part No. - NE68039-T1 |
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Similar Description - NE68039-T1 |
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