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TC1550 Datasheet(PDF) 2 Page - Supertex, Inc |
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TC1550 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 5 page 2 TC1550 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 500 - - V V GS = 0V, ID = 1.0mA V GS(th) Gate threshold voltage 2.0 - 4.0 V V GS = VDS, ID =1.0mA ΔV GS(th) Change in V GS(th) with temperature - -3.8 -5.0 mV/OC V GS = VDS, ID = 1.0mA I GSS Gate body leakage current - - 100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current - - 10 µA V GS = 0V, VDS = Max Rating - - 1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125°C I D(ON) On-state drain current - 100 - mA V GS = 5.0V, VDS = 25V 150 350 - V GS = 10V, VDS = 25V R DS(ON) Static drain-to-source on-state resistance - 45 - Ω V GS = 5.0V, ID = 50mA - 40 60 V GS = 10V, ID = 50mA ΔR DS(ON) Change in R DS(ON) with temperature - 1.0 1.7 %/OC V GS = 10V, ID = 50mA G FS Forward transconductance 50 100 - mmho V DS = 25V, ID =50mA C ISS Input capacitance - 45 55 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common source output capacitance - 8.0 10 C RSS Reverse transfer capacitance - 2.0 5.0 t d(ON) Turn-on delay time - - 10 ns V DD = 25V, I D = 150mA, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-off delay time - - 10 t f Fall time - - 10 V SD Diode forward voltage drop - 0.8 - V V GS = 0V, ISD = 500mA t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = 500mA N-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T. OUTPUT 10V 0V 0V VDD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 10% 90% 90% 10% 90% 10% N-Channel Electrical Characteristics (T A = 25°C unless otherwise specified) Notes: All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) All AC parameters sample tested. 1. 2. |
Similar Part No. - TC1550_08 |
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Similar Description - TC1550_08 |
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