If MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

a

85V

b

b

300 C

ESD Tolerance

2 kV

Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

(Note 3)

(Note 2)

(Note 3)

(Limit)

Supply Current (per Amplifier)

InputOutput Open Circuit

27

40

mA

Bias Current (Pins 2 or 7 or 9)

11

mA

Output Offset Voltage

40

50

60

V

Rise Time

10% to 90%

5

ns

Fall Time

90% to 10%

5

ns

Voltage Gain

b

13

b

15

b

18

VV

OS

Overshoot

8

%

LE

Linearlty Error

8

%

D

Gain Matching

03

dB

Note 1

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur The guaranteed specifications apply only for the test conditions

listed Some performance characteristics may degrade when the device is not operated under the listed test conditions

Note 2

Typical specifications are at 25 C and represent the most likely parametric norm

Note 3

MinMax limits are guaranteed to National’s AOQL (Average Outgoing Quality Level)

Typical Performance

Characteristics

TLH11442 – 3

12 pF is the total load capacitance and includes the test fixture capaci-

tance

FIGURE 1 Test Circuit (One Section)

Frequency Response

TLH11442 – 4

2