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NB2305AI1DR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NB2305AI1DR2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page NB2305A www.onsemi.com 4 Table 5. SWITCHING CHARACTERISTICS VCC = 3.0 V to 3.6 V, GND = 0 V, TA = −40°C to +85°C (Note 4) Parameter Description Test Conditions Min Typ Max Unit 1/t1 Output Frequency 30 pF load 10 pF load 15 15 100 133 MHz 1/t1 Duty Cycle = (t2 / t1) * 100 (−1, −1H) (−1H) Measured at 1.4 V, FOUT = 66.67 MHz < 50 MHz 40 45 50 50 60 55 % t3 Output Rise Time (−1) (−1H) Measured between 0.8 V and 2.0 V 2.5 1.5 ns t4 Output Fall Time (−1) (−1H) Measured between 2.0 V and 0.8 V 2.5 1.5 ns t5 Output−to−Output Skew All outputs equally loaded 250 ps t6 Delay, REF Rising Edge to CLKOUT Rising Edge Measured at VDD/2 0 ±350 ps t7 Device−to−Device Skew Measured at VDD/2 on the CLKOUT pins of the device 0 700 ps tJ Cycle−to−Cycle Jitter Measured at 66.67 MHz, loaded outputs 200 ps tLOCK PLL Lock Time Stable power supply, valid clock presented on REF pin 1.0 ms 4. All parameters specified with loaded outputs. |
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