TN0110N3-G datasheet(2/5 Pages) SUTEX

Part #	TN0110N3-G

Description	N-Channel Enhancement-Mode Vertical DMOS FET

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	SUTEX [Supertex, Inc]

Direct Link	http://www.supertex.com

Logo

2 / 5 page

2

Supertex inc.

www.supertex.com

Doc.# DSFP-TN0110

C080813

TN0110

Electrical Characteristics (T

A = 25

O

C unless otherwise specified)

Sym

Parameter

Min

Typ

Max

Units Conditions

BV

DSS

Drain-to-source breakdown voltage

100

-

V

GS = 0V, ID = 1.0mA

V

GS(th)

Gate threshold voltage

0.6

-

2.0

V

GS = VDS, ID= 0.5mA

ΔV

GS(th)

Change in V

GS(th) with temperature

-

-3.2

-5.0 mV/OC V

GS = VDS, ID= 1.0mA

I

GSS

Gate body leakage

-

100

nA

V

GS = ± 20V, VDS = 0V

I

DSS

Zero Gate voltage drain current

-

10

µA

V

GS = 0V, VDS = Max Rating

-

500

µA

V

GS = 0V, VDS = 0.8 Max Rat-

ing, T

A = 125°C

I

D(ON)

ON-state drain current

0.75

1.4

-

A

V

GS = 5.0V, VDS = 25V

2.0

3.4

-

V

GS = 10V, VDS = 25V

R

DS(ON)

Static drain-to-source on-state resistance

-

2.0

4.5

Ω

V

GS = 4.5V, ID = 250mA

-

1.6

3.0

V

GS = 10V, ID = 500mA

ΔR

DS(ON)

Change in R

DS(ON) with temperature

-

0.6

1.1

%/OC V

GS = 10V, ID = 500mA

G

FS

Forward transductance

225

400

-

mmho V

DS = 25V, ID = 500mA

C

ISS

Input capacitance

-

50

60

pF

V

GS = 0V,

V

DS = 25V,

f = 1.0MHz

C

OSS

Common source output capacitance

-

25

35

C

RSS

Reverse transfer capacitance

-

4.0

8.0

t

d(ON)

Turn-on delay time

-

2.0

5.0

ns

V

DD = 25V,

I

D = 1.0A,

R

GEN = 25Ω

t

r

Rise time

-

3.0

5.0

t

d(OFF)

Turn-off delay time

-

6.0

7.0

t

f

Fall time

-

3.0

6.0

V

SD

Diode forward voltage drop

1.0

1.5

V

GS = 0V, ISD = 500mA

t

rr

Reverse recovery time

-

400

-

ns

V

GS = 0V, ISD = 500mA

Notes:

1.

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.

All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

90%

10%

90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

r

INPUT

OUTPUT

10V

VDD

R

GEN

0V

t

f

Notes:

† I

D (continuous) is limited by max rated Tj .

Thermal Characteristics

Package

I

D

(continuous)†

I

D

(pulsed)

Power Dissipation

@T

C = 25

O

C

I

DR

†

I

DRM

TO-92

350mA

2.0A

1.0W

350mA

2.0A

Similar Part No. - TN0110N3-G

Manufacturer	Part #	Datasheet	Description
Supertex, Inc	TN0110N3	27Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs
List of Unclassifed Man...	TN0110N3	66Kb / 2P	N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

More results

Similar Description - TN0110N3-G

Manufacturer	Part #	Datasheet	Description
Supertex, Inc	VN0104	476Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FET
Supertex, Inc	TN2524	700Kb / 5P	N-Channel Enhancement-Mode Vertical DMOS FET
Zetex Semiconductors	VN10LP	22Kb / 1P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	BSS123	45Kb / 1P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN0540A	26Kb / 1P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN1409A	49Kb / 3P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN2106G	30Kb / 2P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN2110A	87Kb / 3P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN4106F	41Kb / 2P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVN4210A	37Kb / 2P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
	ZVNL110A	22Kb / 1P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

More results

TN0110N3-G Datasheet(PDF) 2 Page - Supertex, Inc

TN0110N3-G Datasheet(HTML) 2 Page - Supertex, Inc

Similar Part No. - TN0110N3-G

Similar Description - TN0110N3-G

Html Pages

1 2 3 4 5

Datasheet Download

Link URL