2013-09-05

1

BFP540FESD

1

2

4

3

Low Noise Silicon Bipolar RF Transistor

• For ESD protected high gain low noise amplifier

• Excellent ESD performance

typical value 1000 V (HBM)

• Pb-free (ROHS compliant) and halogen-free thin small

flat package with visible leads

• Qualification report according to AEC-Q101 available

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP540FESD

AUs

1=B

2=E

3=C

4=E

-

-

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.5

4

V

Collector-emitter voltage

10

Collector-base voltage

10

Emitter-base voltage

1

Collector current

80

mA

Base current

8

250

mW

Junction temperature

150

°C

Storage temperature

-55 ... 150