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BFP420F Datasheet(PDF) 11 Page - Infineon Technologies AG

Part # BFP420F
Description  Low Noise Silicon Bipolar RF Transistor
Download  30 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP420F Datasheet(HTML) 11 Page - Infineon Technologies AG

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BFP420F
Electrical Characteristics
Data Sheet
11
Revision 1.1, 2012-11-07
5
Electrical Characteristics
5.1
DC Characteristics
5.2
General AC Characteristics
Table 5-1
DC Characteristics at
T
A = 25 °C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Collector emitter breakdown voltage
V(BR)CEO
4.5
5.5
–
V
IC =1 mA, IB =0
Open base
Collector emitter leakage current
ICES
–
–
–
1
10
30
μA
nA
VCE =15 V, VBE =0
VCE =3 V, VBE =0
E-B short circuited
Collector base leakage current
ICBO
–1
30
nA
VCB =3 V, IE =0
Open emitter
Emitter base leakage current
IEBO
–
10
100
nA
VEB = 0.5 V, IC =0
Open collector
DC current gain
hFE
60
95
130
VCE =4V, IC = 5 mA
Pulse measured
Table 5-2
General AC Characteristics at
T
A = 25 °C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
fT
18
25
–
GHz
VCE =3V, IC =30mA
f =2 GHz
Collector base capacitance
CCB
–
0.15
0.3
pF
VCB =2V, VBE =0
f =1MHz
Emitter grounded
Collector emitter capacitance
CCE
–0.46
–
pF
VCE =2V, VBE =0
f =1MHz
Base grounded
Emitter base capacitance
CEB
–0.55
–
pF
VEB =0.5 V, VCB =0
f =1MHz
Collector grounded


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