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CAT5251WI-00-T1 Datasheet(PDF) 5 Page - ON Semiconductor

Part # CAT5251WI-00-T1
Description  Quad Digital Potentiometer (POT)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5251WI-00-T1 Datasheet(HTML) 5 Page - ON Semiconductor

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Table 4. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
RPOT
Potentiometer Resistance (−00)
100
kW
RPOT
Potentiometer Resistance (−50)
50
kW
Potentiometer Resistance Tolerance
20
%
RPOT Matching
1
%
Power Rating
25C, each pot
50
mW
IW
Wiper Current
3
mA
RW
Wiper Resistance
IW = 3 mA @ VCC = 3 V
200
300
W
IW = 3 mA @ VCC = 5 V
100
150
W
VTERM
Voltage on any RH or RL Pin
VSS = 0 V
GND
VCC
V
VN
Noise
(Note 3)
nV/Hz
Resolution
0.4
%
Absolute Linearity (Note 4)
RW(n)(actual) − R(n)(expected)
(Note 7)
1
LSB
(Note 6)
Relative Linearity (Note 5)
RW(n+1) − [RW(n)+LSB]
(Note 7)
0.5
LSB
(Note 6)
TCRPOT
Temperature Coefficient of RPOT
(Note 3)
300
ppm/C
TCRATIO
Ratiometric Temp. Coefficient
(Note 3)
20
ppm/C
CH/CL/CW
Potentiometer Capacitances
(Note 3)
10/10/25
pF
fc
Frequency Response
RPOT = 50 kW (Note 3)
0.4
MHz
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
5. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
It is a measure of the error in step size.
6. LSB = RTOT / 255 or (RH − RL) / 255, single pot
7. n = 0, 1, 2, ..., 255.
Table 5. D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current
fSCK = 2.5 MHz, SO Open
VCC = 6 V Inputs = GND
1
mA
ICC2
Power Supply Current
Non-volatile Write
fSCK = 2.5 MHz, SO = Open
VCC = 6 V Inputs = GND
5
mA
ISB
Standby Current (VCC = 5.0 V)
VIN = GND or VCC; SO Open
1
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
−1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3 V)
IOL = 3 mA
0.4
V
VOH1
Output High Voltage (VCC = 6 V)
IOH = −1.6 mA
VCC − 0.8
V
Table 6. PIN CAPACITANCE (Note 8)
(Applicable over recommended operating range from TA = 25C, f = 1.0 MHz, VCC = +5.0 V (unless otherwise noted).)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
COUT
Output Capacitance (SO)
VOUT = 0 V
8
pF
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD, A0, A1
VIN = 0 V
6
pF


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