SUP70N03-09BP datasheet(1/5 Pages) VISHAY

Part #	SUP70N03-09BP

Description	N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

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Manufacturer	VISHAY [Vishay Siliconix]

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SUP/SUB70N03-09BP

Vishay Siliconix

New Product

Document Number: 71229

S-20102—Rev. B, 11-Mar-02

www.vishay.com

1

N-Channel 30-V (D-S), 175

_C, MOSFET PWM Optimized

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (W)

ID (A)

0.009 @ VGS = 10 V

70a

30

0.013 @ VGS = 4.5 V

60

D

G

S

N-Channel MOSFET

TO-220AB

Top View

GD S

SUP70N03-09BP

SUB70N03-09BP

TO-263

S

G

Top View

DRAIN connected to TAB

D

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

V

_

TC = 25_C

70b

Continuous Drain Current (TJ = 175_C)

TC = 100_C

ID

50

Pulsed Drain Current

IDM

200

A

Avalanche Current

IAR

30

Repetitive Avalanche Energya

L = 0.1 mH

EAR

61

mJ

Power Dissipation

TC = 25_C

PD

93b

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)c

40

Junction-to-Ambient

Free Air (TO-220AB)

RthJA

62.5

_C/W

Junction-to-Case

RthJC

1.6

Notes:

a.

Duty cycle

v 1%.

b.

See SOA curve for voltage derating.

c.

When mounted on 1” square PCB (FR-4 material).

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SUP70N03-09BP Datasheet(PDF) 1 Page - Vishay Siliconix

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