HFP70N06 datasheet(2/6 Pages) HUASHAN

Part #	HFP70N06

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

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Shantou Huashan Electronic Devices Co.,Ltd.

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Electrical Characteristics（Ta=25℃ unless otherwise specified）

Symbol

Items

Min.

Typ.

Max.

Unit

Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

60

V

ID=250μA ,VGS=0V

IDSS

Zero Gate Voltage Drain Current

1

μA

VDS =60V, VGS=0V

IGSS

Gate – Body Leakage

±100

nA

VGS= ±20V , VDS =0V

On Characteristics

VGS(th)

Gate Threshold Voltage

2.0

4.0

V

VDS = VGS , ID=250μA

RDS(on)

Static Drain-Source On-Resistance

13

mΩ VGS=10V, ID=40A (Note 2)

Dynamic Characteristics and Switching Characteristics

Ciss

Input Capacitance

4560

pF

Coss

Output Capacitance

430

pF

Crss

Reverse Transfer Capacitance

135

pF

VDS = 25V, VGS = 0V,

f = 1.0 MHz

td(on)

Turn - On Delay Time

37

nS

tr

Rise Time

20

nS

td(off)

Turn - Off Delay Time

140

nS

tf

Fall Time

30

nS

VDS = 30V, VGS = 10 V,

RL =15Ω,RG= 10 Ω

(Note 2)

Qg

Total Gate Charge

85

nC

Qgs

Gate–Source Charge

28

nC

Qgd

Gate–Drain Charge

25

nC

VDS=48V, ID=60A,

VGS = 10V (Note 2)

Rg

Gate Resistance

2.4

Ω

f=1MHz

Drain-Source Diode Characteristics and Maximun Ratings

IS

Continuous Source–Drain Diode

Forward Current

70

A

ISM

Pulsed

Drain-Source

Diode

Forward Current

200

A

VSD

Source–Drain

Diode

Forward

On–Voltage

1.3

V

IS=40A,VGS=0(Note 2)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse width≤300μS, Duty Cycle≤2%

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