BFP740FESD

Product Brief

Data Sheet

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Revision 1.2, 2012-10-11

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Product Brief

The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s

reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design

applications in which low power consumption is a key requirement. The typical transition frequency is

approximately 47 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier

applications. The transistor is fitted with internal protection circuits, which enhance the robustness against

electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic

package with visible leads.