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DCR1003SN0505 Datasheet(PDF) 2 Page - American Microsemiconductor |
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DCR1003SN0505 Datasheet(HTML) 2 Page - American Microsemiconductor |
2 / 4 page Tel.1-973-377-9566Fax.1-973-377-3078 133KingsRoad Madison,NewJersey07940 UnitedStatesofAmerica www.americanmicrosemi.com DEKRACertificationInc. AS9100CandISO9001:2008 CertificateNo.131519.01 ©2016AmericanMicrosemiconductor,Inc. Specificationsaresubjecttochangewithoutnotice DocumentPage2of4 Revised05/2016 DCR1003Series DCR1004Series IT(AV)=1540A VRRM=1700V CHARACTERISTICS―Tcase=25 oCunlessotherwisestated LIMIT 5% Typ 95% Max Units VTM On-statevoltage At2900Apeak DCR1003 1.5 V DCR1004 1.625 V IDM Peakoff-statecurrent Tcase=125 oC 50 mA IRM Peakreversecurrent Tcase=125 oC 50 mA IL Latchingcurrent VD=5VTp=30µS 120 mA IH Holdingcurrent VD=5VGateopencircuit 77 mA td Delaytime VD=100V,Gatesource=25V5Ω 0.58 0.8 1.52 µs tq Circuitcommutated IT=800A,VRRM=50V,dlRR/dt=20A/µS 90 215 380 µs Turn-offtime VDR=fullratedVD, dVDR/dt=20V/µsIinear,Tcase=125 oC VGT Gatetriggervoltage VDRM=5V 3.5 V VGD Gatenon-triggervoltage AtVDRM,Tcase=5V 0.25 V IGT Gatetriggercurrent VDWM=5V 200 mA |
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